Monolithic strained-InGaAsP multiple-quantum-well lasers with integrated electroabsorption modulators for active mode locking
- 4 July 1994
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 65 (1) , 1-3
- https://doi.org/10.1063/1.113059
Abstract
Active mode locking by monolithic lasers with integrated electroabsorption modulators using strained-InGaAsP multiple quantum wells is described. The electroabsorption modulator acts as a short optical gate when a sinusoidal voltage is driven at a deep bias point. Pulse widths as short as 2 ps have been obtained at a repetition rate of 16.3 GHz for a 2.5-mm-long monolithic laser.Keywords
This publication has 15 references indexed in Scilit:
- Strained-InGaAsP MQW electroabsorption modulator integrated DFB laserElectronics Letters, 1993
- Optical short pulse generation at high repetition rate over 80 GHz from a monolithic passively modelocked DBR laser diodeElectronics Letters, 1993
- Optical pulse generation with high repetition rate by sinusoidally-driven InGaAs/InAIAs multiquantum well modulatorElectronics Letters, 1993
- New applications of a sinusoidally driven InGaAsP electroabsorption modulator to in-line optical gates with ASE noise reduction effectJournal of Lightwave Technology, 1992
- Monolithic colliding-pulse mode-locked quantum-well lasersIEEE Journal of Quantum Electronics, 1992
- 40-GHz bandwidth InGaAs/InAlAs multiple quantum well optical intensity modulatorApplied Optics, 1992
- Subpicosecond monolithic colliding-pulse mode-locked multiple quantum well lasersApplied Physics Letters, 1991
- Amplification and compression of weak picosecond optical pulses by using semiconductor-laser amplifiersOptics Letters, 1989
- Optical phase retardation of Lorentzian force-type fibre-optic magnetic sensorElectronics Letters, 1989
- 40 GHz active mode-locking in a 1.5 µm monolithic extended-cavity laserElectronics Letters, 1989