A new degradation mechanism of current drivability and reliability of asymmetrical LDDMOSFET's

1 January 1985

proceedings article
Published by Institute of Electrical and Electronics Engineers (IEEE)

https://doi.org/10.1109/iedm.1985.190943

Abstract

Characteristics of asymmetrical LDDMOSFET's fabricated by inclined n-ion implantation have been investigated. It has been newly found that current drivability and reliability of asymmetrical LDDMOSFET's are affected by n-ion incident angle and the gate's bird's beak length. Symmetrical and shorter gate's bird's beak LDDMOSFET's are more current drive capable than asymmetrical and longer ones. These results are well explained by our simple model. On the other hand, shorter drain n-- gate overlap and gate's bird's beak LDDMOSFET's are less reliable than longer ones.

Keywords

DEGRADATION
OXIDATION
SUBSTRATES
SURFACE RESISTANCE
SEMICONDUCTOR DEVICES
RELIABILITY ENGINEERING
LABORATORIES
ION IMPLANTATION
MOSFET CIRCUITS
VERY LARGE SCALE INTEGRATION

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