A study of contaminant overlayer on Ge(100) surface using kinetic resolved XPS
- 1 May 1994
- Vol. 45 (5) , 597-601
- https://doi.org/10.1016/0042-207x(94)90260-7
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- XPS valence band studies of the bonding chemistry of germanium oxides and related systemsApplied Surface Science, 1991
- Composition and chemical states of the plasma anodised film on GeJournal of Physics D: Applied Physics, 1989
- Composition depth profiles of oxidized silicon and sputtered GaAs from angle-resolved x-ray photoelectron spectroscopyJournal of Vacuum Science & Technology B, 1988
- The Nitridation of Thick Germanium Oxide Films on Single‐Crystal GermaniumJournal of the Electrochemical Society, 1984
- Chemical and structural characterization of epitaxial compound semiconductor layers using X-ray photoelectron diffractionSurface and Interface Analysis, 1981
- Quantitative electron spectroscopy of surfaces: A standard data base for electron inelastic mean free paths in solidsSurface and Interface Analysis, 1979
- Chemical bond and related properties of SiO2 III. Core-level shifts in SiOxPhysica Status Solidi (a), 1977
- Chemical bond and related properties of SiO2. II. Structural TrendsPhysica Status Solidi (a), 1977
- Chemical bond and related properties of SiO2 I. character of the chemical bondPhysica Status Solidi (a), 1977
- Solid state—and surface—analysis by means oF angular-dependent x-ray photoelectron spectroscopyProgress in Solid State Chemistry, 1976