Transition-metal impurities in III-V compounds
- 10 July 1985
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 18 (19) , 3615-3661
- https://doi.org/10.1088/0022-3719/18/19/005
Abstract
A survey of the recent progress on the properties of transition-metal impurities in the most common III-V compounds GaAs, InP and GaP is presented. A summary of experimental techniques available for identifying deep centers and/or locating deep levels in the band gap is given. The author concentrates on 3d isolated impurities, giving the known energy levels of Fe-group substitutional impurities in the three compounds. Complexes involving these impurities are also considered. In addition, 4d, 5d and rare earth impurities are briefly discussed.Keywords
This publication has 183 references indexed in Scilit:
- General trends in the luminescence properties of transition elements centres in III–V semiconducting compoundsPhysica B+C, 1983
- Deep level optical spectroscopy of the levels introduced by transition metals in GaAsPhysica B+C, 1983
- Compensation mechanism in Ni-diffused n-type GaPPhysica B+C, 1983
- Transition metal impurities in InP : Defect complexes and native defectsPhysica B+C, 1983
- Photoluminescence excitation spectroscopy of Fe-doped GaPPhysica B+C, 1983
- Chromium in trigonal site in GaAsPhysica B+C, 1983
- Electronic states of selected deep level defects in III–V semiconductorsPhysica B+C, 1983
- Electron paramagnetic resonance of InP:Co2+Physica B+C, 1983
- Electron-nuclear double resonance of cubic 55Mn2+ in GaPSolid State Communications, 1979
- Absorption coefficient of infrared laser window materialsJournal of Physics and Chemistry of Solids, 1973