Stability of boron- and gallium-induced surface structures on Si(111) during deposition and epitaxial growth of silicon

31 July 1989

journal article
Published by AIP Publishing in Applied Physics Letters

Vol. 55 (5) , 442-444
https://doi.org/10.1063/1.101869

Abstract

We have undertaken a new set of experiments to investigate the behavior of adsorbed-impurity induced reconstructions at growth interfaces. We have observed a striking difference in the stability of the B(3)1/2×(3)1/2 and Ga(3)1/2×(3)1/2 two-dimensional structures at the interface between Si(111) and a-Si, and in their segregation behavior during molecular beam epitaxy crystal growth. This leads to a new model of dopant behavior in silicon molecular beam epitaxy.

Keywords

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