Time-resolved spectroscopy of Zn- and Cd-doped GaN
- 1 May 1987
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 61 (9) , 4589-4592
- https://doi.org/10.1063/1.338366
Abstract
Photoluminescence transients and time-resolved luminescence spectra are reported for the violet-blue emissions from epitaxial layers of Zn- and Cd-doped GaN. A typical decay time of 300 ns is reported for the blue GaN:Zn emission, peaking at about 2.89 eV. For GaN:Cd a somewhat longer decay time of τ≊1 μs dominates for the broad peak centered at ≊2.72 eV. In both cases it is concluded that the simple process involving a free-to-bound transition of an electron to a hole bound at the ZnGa, respectively, the CdGa acceptor is the dominating recombination mechanism corresponding to these characteristic decay rates.This publication has 20 references indexed in Scilit:
- Properties of Zn-doped VPE-grown GaN. II. Optical cross sectionsJournal of Applied Physics, 1980
- Properties of Zn-doped VPE-grown GaN. I. Luminescence data in relation to doping conditionsJournal of Applied Physics, 1980
- Effect of growth parameters on the properties of GaN : Zn epilayersJournal of Crystal Growth, 1977
- Fundamental energy gap of GaN from photoluminescence excitation spectraPhysical Review B, 1974
- Luminescence in epitaxial GaN : CdJournal of Applied Physics, 1974
- Properties of Zn-doped GaN. I. PhotoluminescenceJournal of Applied Physics, 1974
- Luminescence of Zn- and Cd-doped GaNJournal of Applied Physics, 1972
- Absorption, Reflectance, and Luminescence of GaN Epitaxial LayersPhysical Review B, 1971
- Donor-acceptor pair recombination in GaNSolid State Communications, 1971
- Kinetics of Radiative Recombination at Randomly Distributed Donors and AcceptorsPhysical Review B, 1965