Growth and characterization of Bi12SiO20films by metalorganic chemical vapor deposition
- 1 December 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 23 (12) , 2152-2158
- https://doi.org/10.1109/jqe.1987.1073299
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Growth kinetics in the MOVPE of ZnSe on GaAs using zinc and selenium alkylsJournal of Crystal Growth, 1986
- Properties of Pure and Doped Bi12GeO2oand Bi12SiO20 CrystalsPhysica Status Solidi (a), 1986
- MOCVD growth and characterization of high quality InPJournal of Crystal Growth, 1985
- Physical Characterization Of The Photorefractive Incoherent-To-Coherent Optical ConverterOptical Engineering, 1985
- Growth of ZnO films by the plasma-enhanced metalorganic chemical vapor deposition techniqueJournal of Crystal Growth, 1985
- Phase-conjugate wavefront generation via real-time holography in Bi_12SiO_20 crystalsOptics Letters, 1979
- Structural studies of some body-centered cubic phases of mixed oxides involving Bi2O3: The structures of Bi25FeO40 and Bi38ZnO60Journal of Solid State Chemistry, 1975
- Electrical and Optical Properties of Bi12SiO20Journal of Applied Physics, 1971
- The Use of Metal-Organics in the Preparation of Semiconductor MaterialsJournal of the Electrochemical Society, 1969
- Polymorphism of bismuth sesquioxide. II. Effect of oxide additions on the polymorphism of Bi2O3Journal of Research of the National Bureau of Standards Section A: Physics and Chemistry, 1964