Submicro- and nanometer e-beam lithography and reactive ion etching with single layer chemically amplified negative resist
- 31 January 1994
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 23 (1-4) , 283-286
- https://doi.org/10.1016/0167-9317(94)90156-2
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
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- Characterization of AZ PN114 resist for high resolution using electron-beam and soft-x-ray projection lithographiesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Process latitude for the chemical amplification resists AZ PF514 and AZ PN114Published by SPIE-Intl Soc Optical Eng ,1991
- Proximity effect in electron-beam lithographyJournal of Vacuum Science and Technology, 1975