I n s i t u resistivity measurement of cobalt silicide formation
- 15 September 1987
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 62 (6) , 2290-2294
- https://doi.org/10.1063/1.339486
Abstract
In situ resistivity measurements have been utilized to study the reaction and silicide formation between cobalt and amorphous silicon thin films from room temperature to 800 °C. In conjunction, structure and composition changes were analyzed by x‐ray diffraction and Rutherford backscattering spectrometry. Formation of Co2Si, CoSi, and CoSi2 were observed. Interfacial reaction to form Co2Si occurs at approximately 400 °C. In bilayers of excess silicon, CoSi forms at approximately 520 °C and, if free silicon is still present, CoSi2 forms at about 550 °C. In the case of excess cobalt, Co2Si forms first and is followed by a cobalt‐rich solid solution. Co3Si silicide was not observed.This publication has 13 references indexed in Scilit:
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