Thermal decomposition of SnS2 and SnSe2: Novel molecular-beam epitaxy sources for sulfur and selenium

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Abstract
New sources of selenium and sulfur for UHV preparation of thin films are described. These sources, utilizing the high temperature thermal decomposition of SnSe2 and SnS2, are bakeable to at least 300 °C providing much more convenience than element Se and S sources. The thermal decomposition is studied with thermal gravitometry, mass spectrometry, and x-ray photoemission spectroscopy. The utility of the sources is demonstrated by the epitaxial growth of TiSe2 on MoS2.

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