Hot-phonon effects in bulk GaAs

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Abstract
A theoretical model that accounts for both phonon disturbances and the electron-hole interaction is used to evaluate the role of hot-phonon effects in GaAs excited by a subpicosecond laser beam. Although the electron-hole interaction is not able to thermalize electrons and holes before significant phonon emission occurs it is mainly phonon heating that is found to be responsible for the experimentally observed reduction of the carrier cooling rates.