Electron-optical-phonon interaction in binary/ternary heterostructures

Abstract
The macroscopic dielectric continuum model is used to derive electron‐optical‐phonon interaction Hamiltonians for binary/ternary heterostructures containing both single and double heterointerfaces. The formulation presented in this work leads to a general prescription for the calculation of mode‐strength coefficients in ternary‐containing heterostructures. An illustration of these results is provided by exhibiting the mode strengths of the interaction Hamiltonians for the interface and the half‐space longitudinal optical modes in a GaAs/AlyGa1−yAs single heterostructure.