Study of interface formation on Co/Si(111)-7×7 using angle-resolved photoemission

• 1 May 1989
• journal article
• Published by American Vacuum Society in Journal of Vacuum Science & Technology A
• Vol. 7  (3) , 2449-2453
• https://doi.org/10.1116/1.575918

Abstract

Keywords

• EPITAXIAL GROWTH
• MATERIALS SCIENCE
• SCHOTTKY BARRIER
• INTERFACES
• SILICON
• ELEMENTS
• ELECTRONIC STRUCTURE
• SECONDARY EMISSION
• LAYERS
• SEMIMETALS
• VALENCE
• EPITAXY