Electric field dependence of the Hall effect inNbSe3

The Hall effect in ${\mathrm{NbSe}}_3$ has been measured in the magnetic field range 0-200 kG at temperatures of 20 and 30 K. At high magnetic fields the Hall coefficient is positive and the Hall voltage shows a strong dependence on electric field. As the electric field is increased from 0 to 80 mV/cm the Hall resistance is reduced by a factor ~ 5 in correspondence to a similar reduction observed in the magnetoresistance. This reduction can be a precursor to the onset of charge-density-wave (CDW) motion and is only slightly affected when CDW motion does occur.