High-Rate Deposition of a-Si:H Film with a Separated Plasma Triode Method
- 1 January 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (1R)
- https://doi.org/10.1143/jjap.27.14
Abstract
The separated plasma triode (SPT) method has been developed to deposit high-quality a-Si:H films at high deposition rates. Plasma properties were measured by a probe method and an optical emission spectroscopy (OES) method. It is possible to improve the electron density in a plasma without increasing the plasma potential near the substrate by the SPT method. High-quality a-Si:H films and high-performance a-Si solar cells were obtained at high deposition rates using the SPT method.Keywords
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