Study of the conducting channel of the JG FET application to the noise in saturation range
- 15 June 1974
- Vol. 74 (3) , 613-622
- https://doi.org/10.1016/0031-8914(74)90365-6
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Space charge induced in semiconductors by hot carrier regimePhysics Letters A, 1973
- Analysis of the thermal noise behaviour in JG FET at low temperaturePhysica, 1971
- Computer Aided Two-dimensional Analysis of the Junction Field-effect TransistorIBM Journal of Research and Development, 1970
- Potential, field and carrier distribution in the channel of junction field-effect transistorsSolid-State Electronics, 1970
- Characteristics of junction field effect devices with small channel length-to-width ratiosSolid-State Electronics, 1967