CESIUM-GaAs SCHOTTKY BARRIER HEIGHT

1 December 1967

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 11 (11) , 357-358
https://doi.org/10.1063/1.1755013

Abstract

The Schottky barrier height at the interface of cesium metal and vacuum‐cleaved p‐type GaAs has been found to be 0.63 ± 0.03 eV. These measurements were made photovoltaically at 80°K and indicate that a heavy coverage of cesium leaves the surface roughly intrinsic.

Keywords

SCHOTTKY BARRIER
BARRIER HEIGHT
GAAS
CESIUM
PHOTOVOLTAICALLY
MADE
COVERAGE
VACUUM

This publication has 4 references indexed in Scilit:

Fermi level stabilization at cesiated semiconductor surfaces
Solid State Communications, 1967
Metal-semiconductor surface barriers
Solid-State Electronics, 1966
Energy Structure in Photoelectric Emission from Cs-Covered Silicon and Germanium
Physical Review B, 1966
GaAs-Cs: A new type of photoemitter
Solid State Communications, 1965