GATE CURRENTS AND DEVICE DEGRADATION : CARRIER TRANSPORT IN GATE OXIDES OF MOSFET's

Publisher Website
Google Scholar
Abstract
A new approach to calculate gate currents in MOS-transistors is presented. We use a nonlocal expression for carrier injection and a modified drift diffusion approximation to describe the flow of charge inside the oxide. Gate currents of n- and p-channel devices are consistently calculated with one set of parameters. The build up of oxide charge is monitored and the shift in device characteristics is described by solving simultaneously trapping rate equations in the 2-D oxide region

This publication has 0 references indexed in Scilit: