Sufficiently side-mode-suppressed high-output-power 1.5 μm DFB lasers

13 March 1986

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 22 (6) , 327-328
https://doi.org/10.1049/el:19860224

Abstract

An antireflection/high-reflection (AR/HR) facet configuration was applied to a 1.5 μm DFB laser diode. As a result, a maximum output power of 45 mW was obtained. The diode was found to have high spectral stability under high-frequency modulation (side-mode suppression ratio > 30 dB). These results show that this configuration is a technique for high-performance DFB laser diodes.

Keywords

HIGH-FREQUENCY MODULATION
OPTICAL COMMUNICATION EQUIPMENT
45 MW
CAVITY RESONATORS
HIGH SPECTRAL STABILITY
HIGH-OUTPUT-POWER
DFB LASER DIODE
SIDE-MODE SUPPRESSION
SEMICONDUCTOR LASERS
ANTIREFLECTION/HIGH-REFLECTION FACET

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