Field Effect at High Frequency†
- 1 February 1959
- journal article
- electronics section
- Published by Taylor & Francis in Journal of Electronics and Control
- Vol. 6 (2) , 97-112
- https://doi.org/10.1080/00207215908937134
Abstract
The paper develops the theory of the field effect at high frequencies, using the same basic assumptions as Garrett (1957), with more complete conditions at the back surface. The charges induced in the front surface layer are given as the sums of two terms, of which one depends on the surface properties only, and the other is proportional to the modulation of the carrier density at the boundary between the surface layer and the bulk, which depends on the filament lifetime. The results are illustrated in detail by e numerical example.Keywords
This publication has 4 references indexed in Scilit:
- High-Frequency Relaxation Processes in the Field-Effect ExperimentPhysical Review B, 1957
- Field Effect in Germanium at High FrequenciesPhysical Review B, 1957
- Physical Theory of Semiconductor SurfacesPhysical Review B, 1955
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952