A new analysis of the threshold voltage for non-uniform ion-implant MOSFET's
- 1 November 1982
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 29 (11) , 1810-1813
- https://doi.org/10.1109/T-ED.1982.21031
Abstract
An analysis for the threshold voltage of MOSFET's with a Gaussian ion-implant profile is presented. Two parameters xpand xb, which characterize the peak location and the spread of a Gaussian profile, can be arbitrarily adjusted such that even a deeply ion-implanted device can be simulated. The theory predicts a good agreement with available experimental data collected from transistors with a wide range of process parameters and also confirms the so-called anomalous short-channel effect recently observed by Nishida and Onodera [3].Keywords
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