Chemical changes in chromium silicide thin films as a result of laser trimming as determined by SAM and XPS

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Abstract
Scanning Auger microscopy (SAM), x-ray photoelectron spectroscopy (XPS), and scanning electron microscopy (SEM) were used to characterize the various chemical changes which can occur as a result of laser trimming of passive circuit devices fabricated from chromium silicide (CrSi) thin films. A sample matrix consisting of CrSi deposited on various sustrates, including silicon (Si), glass (SiO2), and silicon nitride (Si3N4), and subsequently coated with SiO2, was analyzed. Comparisons were made between trimmed and untrimmed samples. Results indicated a variance in the oxide content of the CrSi film and the oxidation state of the Cr, dependent upon the substrate material. These results were obtained from Auger elemental maps, and line scans of the depassivated laser kerfs and XPS spectra of trimmed and untrimmed sheet films. SEM micrographs taken of the glass overcoat indicate that the laser beam leaves the glass physically unaltered, transforming only the underlying chromium silicide.

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