Methods for Radiation Testing Random Access Memories and LSI Circuits

1 January 1977

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science

Vol. 24 (6) , 2341-2346
https://doi.org/10.1109/TNS.1977.4329218

Abstract

The background to many of the current industry approaches to electrical testing of LSI devices is presented along with modifications to obtain the radiation responses of the devices. The results of several experiments conducted on CMOS RAMs using these approaches are presented. Although the CMOS technology was used in the experimental work, the basic technique is applicable to other technologies.

Keywords

CIRCUIT TESTING
RANDOM ACCESS MEMORY
LARGE SCALE INTEGRATION
CMOS TECHNOLOGY
MANUFACTURING
RADIATION EFFECTS
CURRENT MEASUREMENT
SPACE TECHNOLOGY
SYSTEM TESTING
CAPACITANCE MEASUREMENT

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