Structure-dependent surface conductance at the initial stages in metal epitaxy on Si(111) surfaces
- 1 May 1993
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 228 (1-2) , 113-116
- https://doi.org/10.1016/0040-6090(93)90576-b
Abstract
No abstract availableFunding Information
- Ministry of Education, Culture, Sports, Science and Technology
This publication has 13 references indexed in Scilit:
- Surface states and Fermi-level pinning at epitaxial Pb/Si(111) surfacesPhysical Review B, 1992
- Surface structures and conductance at epitaxial growths of Ag and Au on the Si(111) surfacePhysical Review Letters, 1992
- Orientation-dependent chemistry and Schottky-barrier formation at metal-GaAs interfacesPhysical Review Letters, 1990
- Atomic-structure-dependent Schottky barrier at epitaxial Pb/Si(111) interfacesPhysical Review Letters, 1990
- Photoelectron spectroscopy of surface states on semiconductor surfacesSurface Science Reports, 1988
- Surface states of ordered Au, Ag, and Cu overlayers on Si(111) studied by inverse photoemissionPhysical Review B, 1986
- Bulk and surface electronic structures of Si(111)2×1 and Si(111)7×7 studied by angle-resolved photoelectron spectroscopyPhysical Review B, 1985
- Schottky-Barrier Formation at Single-Crystal Metal-Semiconductor InterfacesPhysical Review Letters, 1984
- Determination of the Fermi-level pinning position at Si(111) surfacesPhysical Review B, 1983
- Energy Structure in Photoelectric Emission from Cs-Covered Silicon and GermaniumPhysical Review B, 1966