The effect of atomic hydrogen on the growth of gallium nitride by molecular beam epitaxy
- 28 October 1996
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 69 (18) , 2731-2733
- https://doi.org/10.1063/1.117693
Abstract
GaN was grown by molecular beam epitaxy using an rf plasma source. Growth under gallium-rich conditions at 730 °C was required to produce high quality layers as indicated by photoluminescence, Hall effect, atomic force microscopy, and x-ray diffraction measurements. Atomic hydrogen has a significant effect for Ga-rich growth, increasing growth rates by as much as a factor of 2.Keywords
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