Tantalum nitride films as resistors on chemical vapor deposited diamond substrates
- 15 May 1993
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 73 (10) , 5208-5212
- https://doi.org/10.1063/1.353747
Abstract
Tantalum nitride films were reactive sputter deposited onto chemical vapor deposited (CVD)‐diamond self‐standing thick layers, to be used as resistors for microelectronic applications. The TaN films had excellent morphology and were very stable through heating cycles at temperatures up to 400 °C for a few hours. Post‐deposition sintering of the films at temperatures up to 300 °C stabilized the film resistance at values in the range of 75–85 Ω. The deposited film was later patterned with photoresist and dry etched, at rates of up to 70 nm min−1 and the resulting features served as masks for further self‐aligned etching processes of the underlying CVD‐diamond layer.This publication has 7 references indexed in Scilit:
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