Free carriers's effective mass and relaxation-time analysis by high-pulsed-field Faraday oscillations in III-V compounds

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Abstract
The high-pulsed-magnetic-field technique offers a convenient means for observing a large number of Faraday oscillations in a semiconductor, in the far infrared (10.6 μm). The known values of the electron effective mass in InSb and GaAs are deduced from the period, but within the frame of the classical theory the decay of the oscillations as a function of the magnetic field is stronger than can be expected from dc conductivity and infrared absorption at the same frequency, in zero field. This is interpreted as due to a marked influence of the magnetic field on the relaxation. The preliminary results of a quantum-mechanical treatment are discussed.