Formation of partially coherent antimony precipitates in ion implanted thermally annealed silicon
- 1 December 1983
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 54 (12) , 6875-6878
- https://doi.org/10.1063/1.331992
Abstract
Thermal annealing of a supersaturated solid solution of antimony in silicon results in the formation of partially coherent antimony precipitates. Transmission electron microscopy and microdiffraction studies show the precipitates to be bounded by {112} Si surfaces with the {111} Si and {1̄012} Sb planes coherent across the interface. The role of dislocations in the growth of the precipitates is discussed.This publication has 3 references indexed in Scilit:
- Solid-Phase-Epitaxial Growth in Ion-Implanted SiliconPhysica Status Solidi (a), 1982
- Formation of metastable supersaturated solid solutions in ion implanted silicon during solid phase crystallizationApplied Physics Letters, 1982
- Diffraction contrast from spherically symmetrical coherency strainsPhilosophical Magazine, 1963