Effects of rapid thermal annealing on InP layers grown on GaAs substrates by gas-source molecular beam epitaxy

Abstract
InP layers were grown on (100) GaAs substrates by gas-source molecular beam epitaxy and then were annealed by the rapid thermal annealing (RTA) method. The effects of annealing time and temperature on crystalline structure were studied by double-crystal x-ray diffraction. Significant improvement in crystalline quality was observed, due to RTA. The smallest linewidth was 315 s of arc for the 2-μm-thick layers upon annealing at 940 °C for 10 s. Using lower temperatures and longer annealing times, the linewidths remained broader but the loss of phosphorus was reduced.

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