60 GHz reflection gain based on superlattice negative differential conductance

15 April 1993

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 29 (8) , 648-649
https://doi.org/10.1049/el:19930434

Abstract

The negative differential conductance originating from miniband negative effective mass has been characterised at high frequencies in two GaAs/AlAs superlattice devices. High reflection gains reaching 10 dB at 38 GHz have been observed up to 60 GHz. These results demonstrate the excellent potentialities of superlattices for millimetre-wave oscillator applications.

Keywords

GAAS-ALAS SUPERLATTICE DEVICES
NEGATIVE DIFFERENTIAL CONDUCTANCE
10 DB
0 TO 60 GHZ
MILLIMETRE-WAVE OSCILLATOR
REFLECTION GAIN
SMITH CHART
MINIBAND NEGATIVE EFFECTIVE MASS