Limited reaction processing: In-situ metal—oxide—semiconductor capacitors

1 May 1986

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 7 (5) , 282-284
https://doi.org/10.1109/EDL.1986.26374

Abstract

Limited reaction processing (LRP) has been used to fabricate in-situ silicon-silicon dioxide-polycrystalline silicon layers for metal-oxide-semiconductor (MOS) capacitors. The process consists of multiple in-situ rapid thermal processing steps to grow or deposit different layers. Capacitors have been fabricated from these layers and analyzed by capacitance-voltage measurements for interfacial fixed charge and interface state density. The capacitors exhibit excellent characteristics.

Keywords

OXIDATION
SILICON
INDUCTORS
MOS CAPACITORS
RAPID THERMAL PROCESSING
GASES
TEMPERATURE
INSULATION
FABRICATION
NONHOMOGENEOUS MEDIA