TRAVELING-WAVE AMPLIFICATION BY DRIFTING CARRIERS IN SEMICONDUCTORS
- 15 September 1966
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 9 (6) , 251-253
- https://doi.org/10.1063/1.1754735
Abstract
A novel method for traveling‐wave amplification by the interaction of drifting carriers in semiconductors with an external slow‐wave circuit is described. The coupling between a plate semiconductor and a plane circuit with periodic structure is analyzed and the resulting dispersion relation is solved. The propagating wave is amplified when the drift velocity of carriers exceeds the phase velocity of the wave. The wave characteristics are quite similar to those for ultrasonic amplification. For n‐InSb at 77°K, the predicted gain for 4 Gc/sec is over 100 dB/mm.Keywords
This publication has 1 reference indexed in Scilit:
- Amplification of Ultrasonic Waves in Piezoelectric SemiconductorsJournal of Applied Physics, 1962