Auger recombination in heavily doped shallow-emitter silicon p-n-junction solar cells, diodes, and transistors
- 1 July 1979
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 26 (7) , 1104-1106
- https://doi.org/10.1109/t-ed.1979.19555
Abstract
A rigorous analytic evaluation of an emitter model that includes Auger recombination but excludes bandgap narrowing is presented. It is shown that such a model cannot explain the experimentally observed values of the open-circuit voltage VOCin p-n-junction silicon solar cells. Thus physical mechanisms in addition to Auger recombination are responsible for the experimentally observed values of VOCin silicon solar cells and the common-emitter current gain in bipolar transistors.Keywords
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