Nitrogen related doping with implant Si3N4 formation in Si
- 3 February 1986
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (5) , 347-349
- https://doi.org/10.1063/1.96547
Abstract
A heavily conducting region has been observed on implanting nitrogen into silicon for forming a buried dielectric layer. The conduction predominantly occurs in the surface silicon layer adjacent to the higher nitrogen content isolating region. The doping, ≳1018 cm−3 and exceeding previously observed nitrogen related doping, is relatively stable at customary 1150–1200 °C processing temperatures and its elimination requires annealing ≳1300 °C.Keywords
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