On the calculation of doping profiles from C(V) measurements on two-sided junctions
- 1 December 1970
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 17 (12) , 1087-1088
- https://doi.org/10.1109/T-ED.1970.17131
Abstract
It is shown that for a two-sided junction, the doping profile can only be uniquely determined from C(V) measurements if the doping profile is known on one side. Expressions are derived which enable the calculation of the complete doping profile from C(V) measurements and the knowledge of the doping profile on one side.Keywords
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