Extremely high electron mobilities in modulation doped Ga1−xInxAs/InP heterostructures grown by LP-MOVPE
- 1 February 1992
- journal article
- other
- Published by Elsevier in Journal of Crystal Growth
- Vol. 116 (3-4) , 521-523
- https://doi.org/10.1016/0022-0248(92)90664-5
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Transport properties and persistent photoconductivity in InP/In0.53Ga0.47As modulation-doped heterojunctionsJournal of Applied Physics, 1986
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