The effect of CH4/H2 RIE on thin highly doped GaAs layers
- 30 April 1990
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 11 (1-4) , 607-610
- https://doi.org/10.1016/0167-9317(90)90181-r
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Reactive ion etching of GaAs using a mixture of methane and hydrogenElectronics Letters, 1987
- Donor neutralization in GaAs(Si) by atomic hydrogenApplied Physics Letters, 1985