Defect Diffusion Models in NMR and Dielectric Relaxation

Abstract
The effect of diffusing defects such as vacancies, displacements, torsions, and rotational isomers on the nmr and dielectric relaxation behaviour is treated under various aspects. The influences of the dimensionality of the diffusion process, of the mutual hindrance, of the defect concentration, of the defect length and of the mean lifetime are derived and discussed.

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