A CCD Imager on Three Types of P-Wells
- 1 May 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (5R) , 574-579
- https://doi.org/10.1143/jjap.24.574
Abstract
A 488×590-elment interline-transfer CCD imager for the 2/3-inch formal is described. It employs three types of p-wells (shallow, medium, and deep) for smearing suppression as well as for blooming suppression. The shallow p-well incorporates the photodiodes and is completely depleted for blooming suppression. The medium one does the CCD shift registers and also is completely depleted for smearing suppression. The deep one does the output circuitry and is not completely depleted for the stable MOS transistor operation. For 10-percent vertical-height illumination, the smear signal was as small as -73 dB of the illumination signal at a wavelength of 550 nm. Furthermore, this imager employs n+-n--p photodiodes to reduce the change of spectral response with a storage of signal charge.Keywords
This publication has 4 references indexed in Scilit:
- Interline CCD image sensor with an antiblooming structureIEEE Transactions on Electron Devices, 1984
- A new configuration of CCD imager with a very low smear levelIEEE Electron Device Letters, 1981
- Characteristics of the overlaid charge-coupled deviceIEEE Transactions on Electron Devices, 1979
- Transparent Gate Silicon PhotodetectorsIEEE Journal of Solid-State Circuits, 1978