Inverted bulk-heterojunction organic photovoltaic device using a solution-derived ZnO underlayer
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- 2 October 2006
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 89 (14) , 143517
- https://doi.org/10.1063/1.2359579
Abstract
Inverted organic photovoltaic devices based on a blend of poly(3-hexylthiophene) and a fullerene have been developed by inserting a solution-processed ZnO interlayer between the indium tin oxide (ITO) electrode and the active layer using Ag as a hole-collecting back contact. Efficient electron extraction through the ZnO and hole extraction through the Ag, with minimal loss in open-circuit potential, is observed with a certified power conversion efficiency of 2.58%. The inverted architecture removes the need for the use of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) as an ITO modifier and for the use of a low-work-function metal as the back contact in the device.Keywords
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