Low-load friction behavior of epitaxialmonolayers under Hertzian contact
- 15 November 1995
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 52 (20) , 14976-14984
- https://doi.org/10.1103/physrevb.52.14976
Abstract
Monolayers of molecules epitaxially grown on GeS(001) in ultrahigh vacuum were investigated by friction force microscopy in air. The frictional force on the GeS substrate was found to be proportional to the normal force in the first approximation, whereas the friction measured on the first monolayer fits excellently to a ∝ dependence. This different frictional behavior causes a flip in contrast in spatially resolved friction force maps. Additionally, the second monolayer exhibited a lower friction than the first layer at normal forces below the critical force where the contrast flips. The measured data are analyzed using a generalized Hertzian theory, which considers capillary condensation.
Keywords
This publication has 37 references indexed in Scilit:
- Sublimed C60 films for tribologyApplied Physics Letters, 1993
- An investigation of the microfrictional behavior of C60 particle layers on aluminumThin Solid Films, 1992
- Carbon-13 NMR study of the C60 cluster in the solid state: molecular motion and carbon chemical shift anisotropyThe Journal of Physical Chemistry, 1991
- Simultaneous measurement of lateral and normal forces with an optical-beam-deflection atomic force microscopeApplied Physics Letters, 1990
- Combined scanning force and friction microscopy of micaNanotechnology, 1990
- Fundamental experimental studies in tribology: The transition from “interfacial” friction of undamaged molecularly smooth surfaces to “normal” friction with wearWear, 1990
- Atomic-scale friction of a tungsten tip on a graphite surfacePhysical Review Letters, 1987
- Atomic Force MicroscopePhysical Review Letters, 1986
- C60: BuckminsterfullereneNature, 1985
- The shear properties of Langmuir—Blodgett layersProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1982