A laser-scanning apparatus for annealing of ion-implantation damage in semiconductors
- 1 February 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 32 (3) , 142-144
- https://doi.org/10.1063/1.89960
Abstract
The feasibility of annealing ion‐implantation damage by means of a continuous high‐power laser is demonstrated. An apparatus for the scanning of a semiconductor sample is described and a first‐order set of optimum conditions for annealing ion‐implanted Si is given. A preliminary comparison between laser and thermal annealing shows comparable results in terms of electrical activity of the annealed samples.Keywords
This publication has 1 reference indexed in Scilit:
- Use of argon laser radiation in restoration of single-crystal state of ion-implantation-amorphized silicon surfaceSoviet Journal of Quantum Electronics, 1975