The energy of the dangling-bond states in a-Si

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Abstract
Published values for the energies of the dangling-bond states in a-Si fall into two groups which locate the neutral D0 state either 1·2 to 1·3 eV or 0·9 to 1·0 eV below εc., In this Letter, the analyqis of recent majority and minority carrier lifetime experiments is extended to a broadened distribution of D0 states, fitted to the experimentally established dependence of the electron spin density on Fermi-level position. It is shown that such a distribution, centred at energies between 1·1 and 1·2 eV below εc, is consistent with both lifetime and recent capture cross-section data.