A vertical-cavity P-i-N SiGe/Si photodetector for Si-based OEICs
- 23 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 661-664
- https://doi.org/10.1109/iedm.1996.554068
Abstract
We present a novel vertical-cavity P-i-N SiGe/Si photodetector built in a bonded Silicon-On-Insulator (SOI) substrate. A new hybrid time-sharing gas supply scheme for the vertical-cavity photodetector is developed. The vertical-cavity photodetector on a bonded SOI exhibits a high external quantum efficiency (/spl eta//sub exl/) of 60% with a low dark current of 0.5 pA//spl mu/m/sup 2/ and a high photoresponse of 7.8 Gbit/s at /spl lambda/=980 nm.Keywords
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