Reflectance modeling for in situ dry etch monitoring of bulk SiO2 and III–V multilayer structures
- 1 November 1994
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 12 (6) , 3306-3310
- https://doi.org/10.1116/1.587617
Abstract
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