MOVPE regrowth of semi-insulating InP around reactive ion etched laser mesas
- 23 May 1991
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 27 (11) , 926-927
- https://doi.org/10.1049/el:19910579
Abstract
Semi-insulating iron doped InP was grown with MOVPE around reactive ion etched laser mesas without using any wet etchant to optimise the mesa shape or to form a mask overhang. To achieve good planarity and selectivity, growth was performed at high temperature and low pressure. The resulting 3 dB modulation bandwidth of the buried heterostructure laser was 7.9 GHz at 10.5 mW.Keywords
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