Drift Velocity of Electrons in Silicon at High Electric Fields from 4.2° to 300°K

The drift velocity of electrons in silicon at high electric fields is measured in the $\text{〈111〉}$ direction over the range of lattice temperatures from 4.2° to 300°K. It is established that in this range a limiting drift velocity exists. Its temperature dependence is measured. The samples used and the method of measurement are briefly described.