High-temperature aging tests on planar structure InGaAs/InP PIN photodiodes with Ti/Pt and Ti/Au contact

2 August 1984

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 20 (16) , 654-656
https://doi.org/10.1049/el:19840448

Abstract

Planar structure InGaAs/InP PIN photodiodes having low dark current and low junction capacitance characteristics were reproducibly fabricated by using VPE wafers. Bias/temperature life testings for the diodes showed that there were no significant degradations after 5500 h aging at 250°C and 10 V reverse bias by adopting the Ti/Pt and Ti/Au metals for the p-side contact.

Keywords

JUNCTION CAPACITANCE CHARACTERISTICS
TI/PT CONTACT
DARK CURRENT
III-V SEMICONDUCTORS
PLANAR STRUCTURE
TI/AU CONTACT
INGAAS/INP PIN PHOTODIODES
AGING
P-SIDE CONTACT
LIFE TESTINGS
VPE

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