Structure study of Au–GaAs(001) interfaces by HEIS, XPS, and RHEED
- 1 April 1984
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology A
- Vol. 2 (2) , 538-541
- https://doi.org/10.1116/1.572440
Abstract
MeV He+ ion scattering/channeling (HEIS), angle resolved XPS, and RHEED have been applied to study the Au and MBE-grown GaAs(001)-c(4×4) interface structures in the Au film thickness range of ≲70 Å and the annealing temperature range from room temperature up to ∼300 °C. The results show release of the As atoms and epitaxial growth of the Au film even at room temperature. The shrinked Au film after annealing displays selective registry to the [1̄10] direction, which is believed to result from a strong Au–GaAs(001) interaction.Keywords
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