The Hall effect and resistivity of amorphous copper-titanium alloys
- 1 August 1987
- journal article
- Published by IOP Publishing in Journal of Physics F: Metal Physics
- Vol. 17 (8) , 1739-1749
- https://doi.org/10.1088/0305-4608/17/8/020
Abstract
The authors have studied the resistivity and Hall effect of three amorphous CuxTi1-x alloys between 1.24 and 300 K. The use of thin film samples (prepared by RF magnetron sputtering) and a sensitive AC technique for the Hall coefficient allowed an accurate measurement of the temperature dependence of both quantities to be made. They find good agreement with predictions based upon electron-electron correlation theories.Keywords
This publication has 20 references indexed in Scilit:
- Weak localization in thin films: a time-of-flight experiment with conduction electronsPublished by Elsevier ,2002
- Spin-orbit scattering in amorphous CuTi alloysJournal of Physics F: Metal Physics, 1986
- Crystallisation of as-quenched and hydrogenated amorphous Cu100-xTixalloysJournal of Physics F: Metal Physics, 1984
- The temperature dependence of the Hall coefficient of metallic glasses: further evidence for electron-electron interaction effectsJournal of Physics F: Metal Physics, 1984
- Physical interpretation of weak localization: A time-of-flight experiment with conduction electronsPhysical Review B, 1983
- The positive Hall coefficients of amorphous transition-metal alloysJournal of Physics F: Metal Physics, 1983
- Defect-induced tunnelling and the conductivity of strongly disordered systemsJournal of Physics C: Solid State Physics, 1982
- Effect of Spin-Orbit Interaction on Magnetoresistance in the Weakly Localized Regime of Three-Dimensional Disordered SystemsJournal of the Physics Society Japan, 1981
- Design of an alternating current source for resistivity and Hall effect measurementsJournal of Physics E: Scientific Instruments, 1980
- Scaling Theory of Localization: Absence of Quantum Diffusion in Two DimensionsPhysical Review Letters, 1979